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Temperature-dependent exciton-related transition energies mediated by carrier concentrations in unintentionally Al-doped ZnO films

Tang, Kun; Gu, Shulin; Ye, Jiandong; Huang, Shimin; Gu, Ran; Zhu, Shunming; Zhang, Rong; Shi, Yi; Zheng, Youdou

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The authors reported on a carrier-concentration mediation of exciton-related radiative transition energies in Al-doped ZnO films utilizing temperature-dependent (TD) photoluminescence and TD Hall-effect characterizations. The transition energies of free and donor bound excitons consistently change with the measured TD carrier concentrations. Such a carrier-concentration mediation effect can be well described from the view of heavy-doping-induced free-carrier screening and band gap...[Show more]

dc.contributor.authorTang, Kun
dc.contributor.authorGu, Shulin
dc.contributor.authorYe, Jiandong
dc.contributor.authorHuang, Shimin
dc.contributor.authorGu, Ran
dc.contributor.authorZhu, Shunming
dc.contributor.authorZhang, Rong
dc.contributor.authorShi, Yi
dc.contributor.authorZheng, Youdou
dc.date.accessioned2015-09-18T04:35:26Z
dc.date.available2015-09-18T04:35:26Z
dc.identifier.issn00036951
dc.identifier.urihttp://hdl.handle.net/1885/15567
dc.description.abstractThe authors reported on a carrier-concentration mediation of exciton-related radiative transition energies in Al-doped ZnO films utilizing temperature-dependent (TD) photoluminescence and TD Hall-effect characterizations. The transition energies of free and donor bound excitons consistently change with the measured TD carrier concentrations. Such a carrier-concentration mediation effect can be well described from the view of heavy-doping-induced free-carrier screening and band gap renormalization effects. This study gives an important development to the currently known optical properties of ZnO materials.
dc.description.sponsorshipThis research is supported by the State Key Program for Basic Research of China under Grant No. 2011CB302003, National Natural Science Foundation of China (Nos. 61025020, 60990312, and 61274058), Basic Research Program of Jiangsu Province (BK2011437), and the Priority Academic Program Development of Jiangsu Higher Education Institutions.
dc.publisherAmerican Institute of Physics (AIP)
dc.rightshttp://www.sherpa.ac.uk/romeo/issn/0003-6951..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 18/09/15). Copyright 2013 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at https://dx.doi.org/10.1063/1.4809669
dc.sourceApplied Physics Letters
dc.subjectKeywords: Al-doped zno films; Band gap renormalization effects; Donor-bound exciton; Radiative transitions; Temperature dependent; Transition energy; ZnO; Aluminum; Excitons; Metallic films; Optical properties; Semiconductor doping; Zinc oxide; Carrier concentratio
dc.titleTemperature-dependent exciton-related transition energies mediated by carrier concentrations in unintentionally Al-doped ZnO films
dc.typeJournal article
local.description.notesImported from ARIES
local.identifier.citationvolume102
dcterms.dateAccepted2013-05-11
dc.date.issued2013-06-04
local.identifier.absfor091205
local.identifier.absfor090605
local.identifier.absfor020406
local.identifier.ariespublicationf5625xPUB6450
local.publisher.urlhttps://www.aip.org/
local.type.statusPublished Version
local.contributor.affiliationTang, Kun, Nanjing University, China
local.contributor.affiliationGu, Shulin, Nanjing University, China
local.contributor.affiliationYe, Jiandong, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University
local.contributor.affiliationHuang, Shimin, Nanjing University, China
local.contributor.affiliationGu, Ran, Nanjing University, China
local.contributor.affiliationZhu, Shunming, Nanjing University, China
local.contributor.affiliationZhang, R., Nanjing University, China
local.contributor.affiliationShi, Yi, Nanjing University, China
local.contributor.affiliationZheng, Youdou, Nanjing University, China
local.bibliographicCitation.issue22
local.bibliographicCitation.startpage221905
local.identifier.doi10.1063/1.4809669
local.identifier.absseo970102
dc.date.updated2016-02-24T09:29:20Z
local.identifier.scopusID2-s2.0-84879089313
CollectionsANU Research Publications

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