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Imaging crystal orientations in multicrystalline silicon wafers via photoluminescence

Sio, H. C.; Xiong, Z.; Trupke, T.; Macdonald, D.

Description

We present a method for monitoring crystal orientations in chemically polished and unpassivated multicrystalline silicon wafers based on band-to-band photoluminescence imaging. The photoluminescence intensity from such wafers is dominated by surface recombination, which is crystal orientation dependent. We demonstrate that a strong correlation exists between the surface energy of different grain orientations, which are modelled based on first principles, and their corresponding...[Show more]

dc.contributor.authorSio, H. C.
dc.contributor.authorXiong, Z.
dc.contributor.authorTrupke, T.
dc.contributor.authorMacdonald, D.
dc.date.accessioned2015-09-18T02:33:20Z
dc.date.available2015-09-18T02:33:20Z
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/1885/15559
dc.description.abstractWe present a method for monitoring crystal orientations in chemically polished and unpassivated multicrystalline silicon wafers based on band-to-band photoluminescence imaging. The photoluminescence intensity from such wafers is dominated by surface recombination, which is crystal orientation dependent. We demonstrate that a strong correlation exists between the surface energy of different grain orientations, which are modelled based on first principles, and their corresponding photoluminescence intensity. This method may be useful in monitoring mixes of crystal orientations in multicrystalline or so-called “cast monocrystalline” wafers.
dc.description.sponsorshipH. C. Sio acknowledges scholarship support from BT Imaging and the Australian Solar Institute, and the Centre for Advanced Microscopy at ANU for SEM access. This work has been supported by the Australian Research Council.
dc.format5 pages
dc.publisherAmerican Institute of Physics
dc.rightshttp://www.sherpa.ac.uk/romeo/issn/0003-6951..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 18/09/15). Copyright 2012 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at https://dx.doi.org/10.1063/1.4747801
dc.sourceApplied Physics Letters
dc.subjectKeywords: Band-to-band photoluminescence; Grain orientation; Monocrystalline; Multicrystalline; Multicrystalline silicon wafers; Orientation dependent; Photoluminescence intensities; Strong correlation; Surface recombinations; Crystal orientation; Photoluminescence
dc.titleImaging crystal orientations in multicrystalline silicon wafers via photoluminescence
dc.typeJournal article
local.description.notesImported from ARIES
local.identifier.citationvolume101
dcterms.dateAccepted2012-08-09
dc.date.issued2012-08-20
local.identifier.absfor090605
local.identifier.ariespublicationf5625xPUB1178
local.publisher.urlhttps://www.aip.org/
local.type.statusPublished Version
local.contributor.affiliationSio, Hang Cheong (Kelvin), College of Engineering and Computer Science, College of Engineering and Computer Science, Research School of Engineering, The Australian National University
local.contributor.affiliationXiong, Z, State Key Laboratory of PV Science & Technology, Trina Solar Energy Limited, China
local.contributor.affiliationTrupke, T, BT Imaging Pty Ltd, Australia
local.contributor.affiliationMacDonald, Daniel, College of Engineering and Computer Science, College of Engineering and Computer Science, Research School of Engineering, The Australian National University
local.bibliographicCitation.issue8
local.bibliographicCitation.startpage082102
local.identifier.doi10.1063/1.4747801
local.identifier.absseo850504
dc.date.updated2016-02-24T08:39:19Z
local.identifier.scopusID2-s2.0-84865518105
local.identifier.thomsonID000308420800039
CollectionsANU Research Publications

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