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Imaging crystal orientations in multicrystalline silicon wafers via photoluminescence

Sio, H. C.; Xiong, Z.; Trupke, T.; Macdonald, D.


We present a method for monitoring crystal orientations in chemically polished and unpassivated multicrystalline silicon wafers based on band-to-band photoluminescence imaging. The photoluminescence intensity from such wafers is dominated by surface recombination, which is crystal orientation dependent. We demonstrate that a strong correlation exists between the surface energy of different grain orientations, which are modelled based on first principles, and their corresponding...[Show more]

CollectionsANU Research Publications
Date published: 2012-08-20
Type: Journal article
Source: Applied Physics Letters
DOI: 10.1063/1.4747801


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