Imaging crystal orientations in multicrystalline silicon wafers via photoluminescence
We present a method for monitoring crystal orientations in chemically polished and unpassivated multicrystalline silicon wafers based on band-to-band photoluminescence imaging. The photoluminescence intensity from such wafers is dominated by surface recombination, which is crystal orientation dependent. We demonstrate that a strong correlation exists between the surface energy of different grain orientations, which are modelled based on first principles, and their corresponding...[Show more]
|Collections||ANU Research Publications|
|Source:||Applied Physics Letters|
|01_Sio_Imaging_crystal_orientations_2012.pdf||Published Version||1.13 MB||Adobe PDF|
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