High efficiency n-type silicon solar cells with passivating contacts based on PECVD silicon films doped by phosphorus diffusion
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Yan, Di; Phang, Sieu Pheng; Wan, Yimao; Samundsett, Christian; Macdonald, Daniel; Cuevas, Andres
Description
Carrier-selective contacts based on silicon films deposited onto a thin SiOx layer combine high performance with a degree of compatibility with industrial solar cell metallization steps. This paper demonstrates an approach to form electron-selective passivating contacts that maximises the overlap with common industrial equipment; it is based on depositing an intrinsic amorphous silicon (a-Si) layer by PECVD and then doping and re-crystallizing it by means of a thermal phosphorus diffusion. By...[Show more]
dc.contributor.author | Yan, Di | |
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dc.contributor.author | Phang, Sieu Pheng | |
dc.contributor.author | Wan, Yimao | |
dc.contributor.author | Samundsett, Christian | |
dc.contributor.author | Macdonald, Daniel | |
dc.contributor.author | Cuevas, Andres | |
dc.date.accessioned | 2019-02-05T00:40:55Z | |
dc.identifier.issn | 0927-0248 | |
dc.identifier.uri | http://hdl.handle.net/1885/155553 | |
dc.description.abstract | Carrier-selective contacts based on silicon films deposited onto a thin SiOx layer combine high performance with a degree of compatibility with industrial solar cell metallization steps. This paper demonstrates an approach to form electron-selective passivating contacts that maximises the overlap with common industrial equipment; it is based on depositing an intrinsic amorphous silicon (a-Si) layer by PECVD and then doping and re-crystallizing it by means of a thermal phosphorus diffusion. By optimizing the intrinsic a-Si thickness and the phosphorus diffusion temperature, a low recombination current density Joc ≈ 3 fA/cm2 and a low contact resistivity of ρc ≈ 3 mΩ-cm2 have been achieved. Additionally, these electrical parameters have been found to be sensitive to the work function of the outer metal electrode. The application of these optimized electron-selective passivating contacts to n-type silicon solar cells has permitted to achieve a conversion efficiency of 24.7%. A loss analysis has been conducted through Quokka 2 simulations, which together with quantum efficiency measurements, indicate that further optimization should focus on the front boron-doped region of the device. | |
dc.description.sponsorship | The authors wish to acknowledge the support of from the Australian Renewable Energy Agency (ARENA) through the Solar PV research and Development Programme and via Australian Centre for Advanced Photovoltaics (ACAP). | |
dc.format | 5 pages | |
dc.format.extent | 5 pages | |
dc.format.mimetype | application/pdf | |
dc.language.iso | en_AU | |
dc.publisher | Elsevier | |
dc.rights | � 2019 Elsevier B.V. | |
dc.source | Solar Energy Materials and Solar Cells | |
dc.subject | Carrier-selective passivating contacts | |
dc.subject | PECVD | |
dc.subject | Amorphous silicon | |
dc.subject | High efficiency silicon solar cells | |
dc.title | High efficiency n-type silicon solar cells with passivating contacts based on PECVD silicon films doped by phosphorus diffusion | |
dc.type | Journal article | |
local.identifier.citationvolume | 193 | |
dcterms.dateAccepted | 2019-01-03 | |
dc.date.issued | 2019-05 | |
local.identifier.ariespublication | u5786633xPUB742 | |
local.publisher.url | https://www.elsevier.com/en-au | |
local.type.status | Published Version | |
local.contributor.affiliation | Yan, Di, Research School of Electrical,Energy & Materials Engineering, College of Engineering and Computer Science, The Australian National University | |
local.contributor.affiliation | Phang, Sieu Pheng, Research School of Electrical,Energy & Materials Engineering, College of Engineering and Computer Science, The Australian National University | |
local.contributor.affiliation | Wan, Yimao, Research School of Electrical,Energy & Materials Engineering, College of Engineering and Computer Science, The Australian National University | |
local.contributor.affiliation | Samundsett, Christian, Research School of Electrical,Energy & Materials Engineering, College of Engineering and Computer Science, The Australian National University | |
local.contributor.affiliation | Macdonald, Daniel, Research School of Electrical,Energy & Materials Engineering, College of Engineering and Computer Science, The Australian National University | |
local.contributor.affiliation | Cuevas, Andres, Research School of Electrical,Energy & Materials Engineering, College of Engineering and Computer Science, The Australian National University | |
local.description.embargo | 2037-12-31 | |
local.identifier.essn | 1879-3398 | |
local.bibliographicCitation.startpage | 80 | |
local.bibliographicCitation.startpage | 80 | |
local.bibliographicCitation.lastpage | 84 | |
local.identifier.doi | 10.1016/j.solmat.2019.01.005 | |
dc.provenance | Elsevier requires authors posting their accepted manuscript to attach a non-commercial Creative Commons user license (CC-BY-NC-ND). http://www.elsevier.com/about/open-access/lightbox_attach-a-user-license (Publisher journal website 6/2/2019) | |
Collections | ANU Research Publications |
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