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High efficiency n-type silicon solar cells with passivating contacts based on PECVD silicon films doped by phosphorus diffusion

Yan, Di; Phang, Sieu Pheng; Wan, Yimao; Samundsett, Christian; Macdonald, Daniel; Cuevas, Andres

Description

Carrier-selective contacts based on silicon films deposited onto a thin SiOx layer combine high performance with a degree of compatibility with industrial solar cell metallization steps. This paper demonstrates an approach to form electron-selective passivating contacts that maximises the overlap with common industrial equipment; it is based on depositing an intrinsic amorphous silicon (a-Si) layer by PECVD and then doping and re-crystallizing it by means of a thermal phosphorus diffusion. By...[Show more]

CollectionsANU Research Publications
Date published: 2019-05
Type: Journal article
URI: http://hdl.handle.net/1885/155553
Source: Solar Energy Materials and Solar Cells
DOI: 10.1016/j.solmat.2019.01.005

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