High efficiency n-type silicon solar cells with passivating contacts based on PECVD silicon films doped by phosphorus diffusion
Carrier-selective contacts based on silicon films deposited onto a thin SiOx layer combine high performance with a degree of compatibility with industrial solar cell metallization steps. This paper demonstrates an approach to form electron-selective passivating contacts that maximises the overlap with common industrial equipment; it is based on depositing an intrinsic amorphous silicon (a-Si) layer by PECVD and then doping and re-crystallizing it by means of a thermal phosphorus diffusion. By...[Show more]
|Collections||ANU Research Publications|
|Source:||Solar Energy Materials and Solar Cells|
|01 Yan D et al High efficiency n 2019.pdf||554.84 kB||Adobe PDF||Request a copy|
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