Te-based chalcogenide films with high thermal stability for phase change memory

Abstract

This study reports on the synthesis of tellurium-based chalcogenide films that have high thermal stability for phase change memory application. Several Te-based chalcogenide alloys of In-Bi-Te, Ag-Bi-Te, In-Sb-Te, Sn-Sb-Te, Zn-Ge-Te, and Ga-Ge-Te are reported. Their thermal, optical, and electrical properties are investigated. The results show that Bi-Te-based films have a higher crystallization temperature and greater activation energy compared with the other Sb-Te-based and Ge-Te-based films. Especially, In₂.₈Bi₃₆.₆Te₆₀.₆film exhibits high crystallization temperature (252 °C) and great activation energy (5.16 eV), showing much improved amorphous thermal stability. A relatively wider optical band gap (0.674 eV) of thermal annealed In₂.₈Bi₃₆.₆Te₆₀.₆film is obtained. In addition, it also has a higher amorphous/crystalline resistance ratio of about 10⁵, implying that current consumption could be low in the phase-change memory operation.