Wang, Guoxiang; Shen, Xiang; Nie, Qiuhua; Chen, Fen; Wang, Xunsi; Fu, Jing; Chen, Yu; Xu, Tiefeng; Dai, Shixun; Zhang, Wei; Wang, Rongping
This study reports on the synthesis of tellurium-based chalcogenide films that have high thermal stability for phase change memory application. Several Te-based chalcogenide alloys of In-Bi-Te, Ag-Bi-Te, In-Sb-Te, Sn-Sb-Te, Zn-Ge-Te, and Ga-Ge-Te are reported. Their thermal, optical, and electrical properties are investigated. The results show that Bi-Te-based films have a higher crystallization temperature and greater activation energy compared with the other Sb-Te-based and Ge-Te-based films....[Show more]
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