Nakkar, A.; Folliot, H.; Le Corre, A.; Doré, F.; Alghoraibi, I.; Labbé, C.; Elias, G.; Loualiche, S.; Pistol, M.-E.; Caroff, P.; Ellström, C.
We report on long-wavelength photoluminescence(PL) emission at room temperature from self-organized InAssurfacequantum dotsgrown by gas-source molecular beam epitaxy on a GaInAsP∕InP (113)B substrate. The influence of arsenic pressure conditions during growth on the PL emission of surfacequantum dots is detailed as well as oxide/contamination layer formation after growth. Experimental results are in good agreement with six-band k⋅p theory in the envelope function approximation.
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