Optical properties and morphology of InAs ∕ InP (113)B surface quantum dots
We report on long-wavelength photoluminescence(PL) emission at room temperature from self-organized InAssurfacequantum dotsgrown by gas-source molecular beam epitaxy on a GaInAsP∕InP (113)B substrate. The influence of arsenic pressure conditions during growth on the PL emission of surfacequantum dots is detailed as well as oxide/contamination layer formation after growth. Experimental results are in good agreement with six-band k⋅p theory in the envelope function approximation.
|Collections||ANU Research Publications|
|Source:||Applied Physics Letters|
|01_Nakkar_Optical_properties_and_2008.pdf||Published Version||293.73 kB||Adobe PDF|
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