Jolley, Greg; Lu, Hao Feng; Fu, Lan; Tan, Hark Hoe; Jagadish, Chennupati
We report on a detailed analysis of the temperature dependent electrical properties of In0.5Ga0.5As/GaAsquantum dotsolar cells. The effects leading to a reduction in the open circuit voltage are found to be the thermal injection of carriers from the n and p-type layers into the depletion region where they recombine with carriers occupying quantum dot states due to a thermal distribution. The departure of the device studied here from an ideal intermediate band solar cell is discussed.
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