Electron-hole recombination properties of In0.5Ga0.5As/GaAs quantum dot solar cells and the influence on the open circuit voltage
We report on a detailed analysis of the temperature dependent electrical properties of In0.5Ga0.5As/GaAsquantum dotsolar cells. The effects leading to a reduction in the open circuit voltage are found to be the thermal injection of carriers from the n and p-type layers into the depletion region where they recombine with carriers occupying quantum dot states due to a thermal distribution. The departure of the device studied here from an ideal intermediate band solar cell is discussed.
|Collections||ANU Research Publications|
|Source:||Applied Physics Letters|
|01_Jolley_Electron-hole_recombination_2010.pdf||Published Version||825.91 kB||Adobe PDF|
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.