Skip navigation
Skip navigation

Electron-hole recombination properties of In0.5Ga0.5As/GaAs quantum dot solar cells and the influence on the open circuit voltage

Jolley, Greg; Lu, Hao Feng; Fu, Lan; Tan, Hark Hoe; Jagadish, Chennupati

Description

We report on a detailed analysis of the temperature dependent electrical properties of In0.5Ga0.5As/GaAsquantum dotsolar cells. The effects leading to a reduction in the open circuit voltage are found to be the thermal injection of carriers from the n and p-type layers into the depletion region where they recombine with carriers occupying quantum dot states due to a thermal distribution. The departure of the device studied here from an ideal intermediate band solar cell is discussed.

CollectionsANU Research Publications
Date published: 2010-09-23
Type: Journal article
URI: http://hdl.handle.net/1885/15544
Source: Applied Physics Letters
DOI: 10.1063/1.3492836

Download

File Description SizeFormat Image
01_Jolley_Electron-hole_recombination_2010.pdfPublished Version825.91 kBAdobe PDFThumbnail


Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  12 November 2018/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator