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Using graded barriers to control the optical properties of ZnO/Zn0.7Mg0.3O quantum wells with an intrinsic internal electric field

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Hall, C. R.; Dao, Lap Van; Koike, K.; Sasa, S.; Inoue, M.; Yano, M.; Jagadish, C.; Davis, J. A.; Tan, Hark Hoe

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Quantum wells with graded barriers are demonstrated as a means to control both the transition energy and electron-hole wave function overlap for quantum wells with an intrinsic internal electric field. In the case of c-axis grown ZnO/ZnMgO quantum wells, the graded barriers are produced by stepping the magnesium composition during the growth process. Four quantum wells with different structures are examined, where each well has similar transition energy, yet a wide range of wave function...[Show more]

dc.contributor.authorHall, C. R.
dc.contributor.authorDao, Lap Van
dc.contributor.authorKoike, K.
dc.contributor.authorSasa, S.
dc.contributor.authorInoue, M.
dc.contributor.authorYano, M.
dc.contributor.authorJagadish, C.
dc.contributor.authorDavis, J. A.
dc.contributor.authorTan, Hark Hoe
dc.date.accessioned2015-09-18T00:10:56Z
dc.date.available2015-09-18T00:10:56Z
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/1885/15543
dc.description.abstractQuantum wells with graded barriers are demonstrated as a means to control both the transition energy and electron-hole wave function overlap for quantum wells with an intrinsic internal electric field. In the case of c-axis grown ZnO/ZnMgO quantum wells, the graded barriers are produced by stepping the magnesium composition during the growth process. Four quantum wells with different structures are examined, where each well has similar transition energy, yet a wide range of wave function overlaps are observed. Photoluminescence and time resolved photoluminescence show good agreement with calculations.
dc.description.sponsorshipAustralian Research Council is gratefully acknowledged for financial support. C.R.H. thanks Lastek for financial support.
dc.format4 pages
dc.publisherAmerican Institute of Physics (AIP)
dc.rightshttp://www.sherpa.ac.uk/romeo/issn/0003-6951..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 18/09/15). Copyright 2010 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at https://dx.doi.org/10.1063/1.3428430.
dc.sourceApplied Physics Letters
dc.subjectKeywords: Different structure; Electron hole; Growth process; Internal electric fields; Quantum well; Time-resolved photoluminescence; Transition energy; ZnO/ZnMgO; Electric fields; Magnesium; Optical properties; Photoluminescence; Wave functions; Zinc; Semiconduct
dc.titleUsing graded barriers to control the optical properties of ZnO/Zn0.7Mg0.3O quantum wells with an intrinsic internal electric field
dc.typeJournal article
local.description.notesImported from ARIES
local.identifier.citationvolume96
dc.date.issued2010
local.identifier.absfor020503
local.identifier.ariespublicationf2965xPUB242
local.publisher.urlhttps://www.aip.org/
local.type.statusPublished Version
local.contributor.affiliationHall, C R, Swinburne University of Technology, Australia
local.contributor.affiliationDao, Lap Van, Swinburne University of Technology, Australia
local.contributor.affiliationKoike, Kazuto, Osaka Institute of Technology, Japan
local.contributor.affiliationSasa, Shigehiko, Osaka Institute of Technology, Japan
local.contributor.affiliationTan, Hoe Hark, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University
local.contributor.affiliationInoue, Masataka, Osaka Institute of Technology, Japan
local.contributor.affiliationYano, Mitsuaki, Osaka Institute of Technology, Japan
local.contributor.affiliationJagadish, Chennupati, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University
local.contributor.affiliationDavis, Jeff A, Swinburne University of Technology, Australia
local.bibliographicCitation.issue19
local.bibliographicCitation.startpage193117
local.identifier.doi10.1063/1.3428430
dc.date.updated2016-02-24T08:26:22Z
local.identifier.scopusID2-s2.0-77952976415
local.identifier.thomsonID000277756400071
CollectionsANU Research Publications

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