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The study of thermal silicon dioxide electrets formed by corona discharge and rapid-thermal annealing

Kho, Teng C; Baker-Finch, Simeon; McIntosh, Keith R


A silicon dioxide (SiO₂) electret passivates the surface of crystalline silicon (Si) in two ways: (i) when annealed and hydrogenated, the SiO₂–Si interface has a low density of interface states, offering few energy levels through which electrons and holes can recombine; and (ii) the electret’s quasipermanent charge repels carriers of the same polarity, preventing most from reaching the SiO₂–Si interface and thereby limiting interface recombination. In this work, we engineer a charged thermal...[Show more]

CollectionsANU Research Publications
Date published: 2011-03-11
Type: Journal article
Source: Journal of Applied Physics
DOI: 10.1063/1.3559260


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