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The study of thermal silicon dioxide electrets formed by corona discharge and rapid-thermal annealing

Kho, Teng C; Baker-Finch, Simeon; McIntosh, Keith R

Description

A silicon dioxide (SiO₂) electret passivates the surface of crystalline silicon (Si) in two ways: (i) when annealed and hydrogenated, the SiO₂–Si interface has a low density of interface states, offering few energy levels through which electrons and holes can recombine; and (ii) the electret’s quasipermanent charge repels carriers of the same polarity, preventing most from reaching the SiO₂–Si interface and thereby limiting interface recombination. In this work, we engineer a charged thermal...[Show more]

dc.contributor.authorKho, Teng C
dc.contributor.authorBaker-Finch, Simeon
dc.contributor.authorMcIntosh, Keith R
dc.date.accessioned2015-09-17T05:34:37Z
dc.date.available2015-09-17T05:34:37Z
dc.identifier.issn0021-8979
dc.identifier.urihttp://hdl.handle.net/1885/15528
dc.description.abstractA silicon dioxide (SiO₂) electret passivates the surface of crystalline silicon (Si) in two ways: (i) when annealed and hydrogenated, the SiO₂–Si interface has a low density of interface states, offering few energy levels through which electrons and holes can recombine; and (ii) the electret’s quasipermanent charge repels carriers of the same polarity, preventing most from reaching the SiO₂–Si interface and thereby limiting interface recombination. In this work, we engineer a charged thermal SiO₂electret on Si by depositing corona charge onto the surface of an oxide-coated Si wafer and subjecting the wafer to a rapid thermal anneal (RTA). We show that the surface-located corona charge is redistributed deeper into the oxide by the RTA. With 80 s of charging, and an RTA at 380 °C for 60 s, we measure an electretcharge density of 5 × 10¹² cm⁻², above which no further benefit to surface passivation is attained. The procedure leads to a surface recombination velocity of less than 20 cm/s on 1 Ω-cm n-type Si, which is commensurate with the best passivation schemes employed on high-efficiency Si solar cells. In this paper, we introduce the method of SiO₂electret formation, analyze the relationship between charge density and interface recombination, and assess the redistribution of charge by the RTA.
dc.format7 pages
dc.publisherAmerican Institute of Physics
dc.rightshttp://www.sherpa.ac.uk/romeo/issn/0021-8979..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 17/09/15)
dc.rightsCopyright 2011 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics and may be found at https://dx.doi.org/10.1063/1.3559260
dc.sourceJournal of Applied Physics
dc.subjectKeywords: Corona charge; Corona discharges; Crystalline silicons; Electrons and holes; Energy level; High efficiency; Interface recombination; Low density; Rapid thermal anneal; Si solar cells; Si wafer; Silicon dioxide; Surface passivation; Surface recombination v
dc.titleThe study of thermal silicon dioxide electrets formed by corona discharge and rapid-thermal annealing
dc.typeJournal article
local.description.notesImported from ARIES
local.identifier.citationvolume109
dcterms.dateAccepted2011-01-22
dc.date.issued2011-03-11
local.identifier.absfor090605
local.identifier.ariespublicationf2965xPUB2016
local.publisher.urlhttps://www.aip.org/
local.type.statusPublished Version
local.contributor.affiliationKho, Teng, College of Engineering and Computer Science, College of Engineering and Computer Science, Research School of Engineering, The Australian National University
local.contributor.affiliationBaker-Finch, Simeon, College of Engineering and Computer Science, College of Engineering and Computer Science, Research School of Engineering, The Australian National University
local.contributor.affiliationMcIntosh, Keith, College of Engineering and Computer Science, College of Engineering and Computer Science, Research School of Engineering, The Australian National University
local.bibliographicCitation.issue5
local.bibliographicCitation.startpage053108
local.identifier.doi10.1063/1.3559260
local.identifier.absseo850504
dc.date.updated2016-02-24T08:21:10Z
local.identifier.scopusID2-s2.0-79952999504
local.identifier.thomsonID000288387900008
CollectionsANU Research Publications

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