The study of thermal silicon dioxide electrets formed by corona discharge and rapid-thermal annealing
A silicon dioxide (SiO₂) electret passivates the surface of crystalline silicon (Si) in two ways: (i) when annealed and hydrogenated, the SiO₂–Si interface has a low density of interface states, offering few energy levels through which electrons and holes can recombine; and (ii) the electret’s quasipermanent charge repels carriers of the same polarity, preventing most from reaching the SiO₂–Si interface and thereby limiting interface recombination. In this work, we engineer a charged thermal...[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Applied Physics|
|01_Kho_The_study_of_thermal_silicon_2011.pdf||Published Version||1.01 MB||Adobe PDF|
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