Enhanced photoluminescence efficiency of mid-infrared InAsSb nanostructures using a carrier blocking layer
This paper presents a study on the emission efficiency enhancement of InAsSbnanostructures using a carrier blocking layer. InP is proposed to serve as the carrier blocking layer to suppress the thermal escape of carriers in InAsSbnanostructures and significantly enhance their emission efficiency at high temperature (good photoluminescence signal even at 330 K). However, this leads to a blueshift in their emission wavelength due to the significantly increased quantum confinement of the...[Show more]
|Collections||ANU Research Publications|
|Source:||Applied Physics Letters|
|01_Lei_Enhanced_photoluminescence_2010.pdf||Published Version||797.65 kB||Adobe PDF|
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