Skip navigation
Skip navigation

Origin of stress in radio frequency magnetron sputtered zinc oxide thin films

Menon, Rashmi; Gupta, Vinay; Sreenivas, K.; Jagadish, C.; Tan, Hark Hoe

Description

Highly c-axis oriented ZnOthin films have been deposited on silicon substrates by planar rf magnetron sputtering under varying pressure (10–50 mTorr) and oxygen percentage (50–100%) in the reactive gas (Ar + O2) mixture. The as-grown films were found to be stressed over a wide range from −1 × 10¹¹ to −2 × 10⁸ dyne/cm² that in turn depends strongly on the processing conditions, and the film becomes stress free at a unique combination of sputteringpressure and reactive gas composition. Raman...[Show more]

dc.contributor.authorMenon, Rashmi
dc.contributor.authorGupta, Vinay
dc.contributor.authorSreenivas, K.
dc.contributor.authorJagadish, C.
dc.contributor.authorTan, Hark Hoe
dc.date.accessioned2015-09-17T04:30:50Z
dc.date.available2015-09-17T04:30:50Z
dc.identifier.issn0021-8979
dc.identifier.urihttp://hdl.handle.net/1885/15519
dc.description.abstractHighly c-axis oriented ZnOthin films have been deposited on silicon substrates by planar rf magnetron sputtering under varying pressure (10–50 mTorr) and oxygen percentage (50–100%) in the reactive gas (Ar + O2) mixture. The as-grown films were found to be stressed over a wide range from −1 × 10¹¹ to −2 × 10⁸ dyne/cm² that in turn depends strongly on the processing conditions, and the film becomes stress free at a unique combination of sputteringpressure and reactive gas composition. Raman spectroscopy and photoluminescence (PL) analyses identified the origin of stress as lattice distortion due to defects introduced in the ZnOthin film. FTIR study reveals that Zn-O bond becomes stronger with the increase in oxygen fraction in the reactive gas mixture. The lattice distortion or stress depends on the type of defects introduced during deposition. PL spectra show the formation of a shoulder in band emission with an increase in the processing pressure and are related to the presence of stress. The ratio of band emission to defect emission decreases with the increase in oxygen percentage from 50 to 100%. The studies show a correlation of stress with the structural, vibrational, and photoluminescence properties of the ZnOthin film. The systematic study of the stress will help in the fabrication of efficient devices based on ZnOfilm.
dc.description.sponsorshipThe authors thank the Department of Science and Technology (India) and Department of Innovation, Industry, Science and Research (Australia) for financial support through Australia-India Strategic Research fund. Facilities used at the ANU are supported by the Australian National Fabrication Facility. One of the authors (C.J.) acknowledges Australian Laureate Fellowship from the Australian Research Council.
dc.format6 pages
dc.publisherAmerican Institute of Physics
dc.rightshttp://www.sherpa.ac.uk/romeo/issn/0021-8979..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 17/09/15)
dc.rightsCopyright 2011 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics and may be found at https://dx.doi.org/10.1063/1.3552928.
dc.sourceJournal of Applied Physics
dc.subjectKeywords: As-grown films; Band emission; Defect emission; FT-IR study; In-band; Lattice distortions; Oxygen fractions; Photoluminescence properties; PL spectra; Processing condition; Processing pressure; Radio frequencies; Reactive gas; Reactive gas mixtures; rf-Ma
dc.titleOrigin of stress in radio frequency magnetron sputtered zinc oxide thin films
dc.typeJournal article
local.description.notesImported from ARIES
local.identifier.citationvolume109
dc.date.issued2011
local.identifier.absfor020499
local.identifier.ariespublicationf2965xPUB1774
local.publisher.urlhttps://www.aip.org/
local.type.statusPublished Version
local.contributor.affiliationMenon, Rashmi, University of Delhi, India
local.contributor.affiliationGupta, Vinay, University of Delhi, India
local.contributor.affiliationTan, Hoe Hark, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University
local.contributor.affiliationSreenivas, Kondepudy, University of Delhi, India
local.contributor.affiliationJagadish, Chennupati, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University
local.bibliographicCitation.issue6
local.bibliographicCitation.startpage064905
local.identifier.doi10.1063/1.3552928
local.identifier.absseo970102
dc.date.updated2016-02-24T08:17:07Z
local.identifier.scopusID2-s2.0-79953664731
local.identifier.thomsonID000289149900152
CollectionsANU Research Publications

Download

File Description SizeFormat Image
01_Menon_Origin_of_stress_in_radio_2011.pdfPublished Version2.19 MBAdobe PDFThumbnail


Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  19 May 2020/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator