Origin of stress in radio frequency magnetron sputtered zinc oxide thin films
Highly c-axis oriented ZnOthin films have been deposited on silicon substrates by planar rf magnetron sputtering under varying pressure (10–50 mTorr) and oxygen percentage (50–100%) in the reactive gas (Ar + O2) mixture. The as-grown films were found to be stressed over a wide range from −1 × 10¹¹ to −2 × 10⁸ dyne/cm² that in turn depends strongly on the processing conditions, and the film becomes stress free at a unique combination of sputteringpressure and reactive gas composition. Raman...[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Applied Physics|
|01_Menon_Origin_of_stress_in_radio_2011.pdf||Published Version||2.19 MB||Adobe PDF|
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