Modeling the charge decay mechanism in nitrogen-rich silicon nitride films
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Ren, Yongling; Weber, Klaus J.; Nursam, Natalita M.
Description
The stability of negative charge in nitrogen-rich silicon nitride films deposited by plasma-enhanced chemical vapor deposition is investigated by analyzing the influence of storage temperature, postdeposition thermal annealing, and the presence of a tunnel oxide. The results are compared to a charge decay model. Comparison of experimental and modeled results indicates that (i) the tunnel oxide is almost entirely responsible for charge retention in samples with an oxide-nitride-oxide (ONO)...[Show more]
Collections | ANU Research Publications |
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Date published: | 2011-03-25 |
Type: | Journal article |
URI: | http://hdl.handle.net/1885/15518 |
Source: | Applied Physics Letters |
DOI: | 10.1063/1.3571291 |
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01_Ren_Modeling_the_charge_decay_2011.pdf | Published Version | 773.7 kB | Adobe PDF |
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