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Modeling the charge decay mechanism in nitrogen-rich silicon nitride films

Ren, Yongling; Weber, Klaus J.; Nursam, Natalita M.


The stability of negative charge in nitrogen-rich silicon nitride films deposited by plasma-enhanced chemical vapor deposition is investigated by analyzing the influence of storage temperature, postdeposition thermal annealing, and the presence of a tunnel oxide. The results are compared to a charge decay model. Comparison of experimental and modeled results indicates that (i) the tunnel oxide is almost entirely responsible for charge retention in samples with an oxide-nitride-oxide (ONO)...[Show more]

CollectionsANU Research Publications
Date published: 2011-03-25
Type: Journal article
Source: Applied Physics Letters
DOI: 10.1063/1.3571291


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