Modeling the charge decay mechanism in nitrogen-rich silicon nitride films
The stability of negative charge in nitrogen-rich silicon nitride films deposited by plasma-enhanced chemical vapor deposition is investigated by analyzing the influence of storage temperature, postdeposition thermal annealing, and the presence of a tunnel oxide. The results are compared to a charge decay model. Comparison of experimental and modeled results indicates that (i) the tunnel oxide is almost entirely responsible for charge retention in samples with an oxide-nitride-oxide (ONO)...[Show more]
|Collections||ANU Research Publications|
|Source:||Applied Physics Letters|
|01_Ren_Modeling_the_charge_decay_2011.pdf||Published Version||773.7 kB||Adobe PDF|
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