Kim, Chang Oh; Shin, Dong Hee; Choi, Suk-Ho; Belay, K.; Elliman, R. G.
ZnOfilms were prepared on Si(100) wafers by rf sputtering and subsequently implanted with V ions to fluences of (1,2.5,5,10)×10¹⁵ cm¯². The room-temperature ultraviolet photoluminescence(PL) intensity of the implantedfilms is shown to increase with increasing fluence up to 2.5×1015 cm−2, becoming ∼37 times more intense than the emission from the unimplanted ZnOfilm, before decreasing at higher fluences. The increase in PL intensity is correlated with improved crystallinity of ZnO, accompanied...[Show more]
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