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Spatially resolved characterization of InGaAs/GaAs quantum dot structures by scanning spreading resistance microscopy

Hakkarainen, T; Douhéret, O; Anand, S; Fu, Lan; Tan, H. H.; Jagadish, C.

Description

Cross-sectional scanning spreading resistance microscopy (SSRM) is used to investigate stacked InGaAs/GaAs quantum dot(QD)structures with different doping schemes. Spatially resolved imaging of the QDs by SSRM is demonstrated. The SSRM contrast obtained for the QD layers is found to depend on doping in the structure. In the undoped structures both QD-layers and QDs within the layers could be resolved, while in the dopedstructures the QD layers appear more or less uniformly broadened. The origin...[Show more]

CollectionsANU Research Publications
Date published: 2010
Type: Journal article
URI: http://hdl.handle.net/1885/15516
Source: Applied Physics Letters
DOI: 10.1063/1.3467138

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