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Strain relaxation and phonon confinement in self-assembled InAsSb/InP (001) quantum dashes: Effect of deposition thickness and composition

Lei, W.; Tan, H. H.; Jagadish, C.; Ren, Q. J.; Lu, J.; Chen, Z. H.


This paper presents a study on the strain relaxation and phonon confinement effect in InAsSb/InP quantum dashes QDashes. The phonon mode with a frequency between that of InAs-like longitudinal optical mode and that of InP transverse optical mode is determined to be originated from InAsSb QDashes. Despite the small height of the QDashes, their phonon frequency is found to be mainly determined by the strain relaxation in the dashes. With increasing InAsSb deposition thickness and Sb...[Show more]

CollectionsANU Research Publications
Date published: 2010
Type: Journal article
Source: Applied Physics Letters
DOI: 10.1063/1.3522889


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