Fully-inverted piezoresponse hysteresis loops mediated by charge injection in 0.29Pb(In1/2Nb1/2)O3–0.44Pb(Mg1/3Nb2/3)O3–0.27PbTiO3 single crystals

Abstract

The domain structure and local switching behavior of ternary relaxor (001) 0.29Pb(In1/2Nb1/2)O3–0.44Pb(Mg1/3Nb2/3)O3–0.27PbTiO3single crystals are studied using piezoresponse force microscopy. The as-grown crystals exhibit a labyrinthine domain pattern similar to other relaxor-based ferroelectrics. Abnormally switched domains are observed for both positive and negative tip-voltages, with sign-dependent thresholds and growth rates on the poled crystals. Further piezoresponse hysteresis loop measurements show that fully inverted loops can be observed under high switching voltages, mediated by injected charge fields. The dynamic behavior of the observed abnormal switching is qualitatively analyzed and the underlying mechanisms discussed.