In situ spectroscopic study of the plastic deformation of amorphous silicon under non-hydrostatic conditions induced by indentation
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Gerbig, Y. B.; Bradby, Jodie; Haberl, Bianca; Cook, R. F.; Michaels, C. A.
Description
Indentation-induced plastic deformation of amorphous silicon (a-Si) thin films was studied by in situ Raman imaging of the deformed contact region of an indented sample, employing a Raman spectroscopy-enhanced instrumented indentation technique. Quantitative analyses of the generated in situ Raman maps provide unique, new insight into the phase behavior of as-implanted a-Si. In particular, the occurrence and evolving spatial distribution of changes in the a-Si structure caused by processes,...[Show more]
dc.contributor.author | Gerbig, Y. B. | |
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dc.contributor.author | Bradby, Jodie | |
dc.contributor.author | Haberl, Bianca | |
dc.contributor.author | Cook, R. F. | |
dc.contributor.author | Michaels, C. A. | |
dc.date.accessioned | 2019-01-04T05:14:45Z | |
dc.date.available | 2019-01-04T05:14:45Z | |
dc.identifier.issn | 1098-0121 | |
dc.identifier.uri | http://hdl.handle.net/1885/155078 | |
dc.description.abstract | Indentation-induced plastic deformation of amorphous silicon (a-Si) thin films was studied by in situ Raman imaging of the deformed contact region of an indented sample, employing a Raman spectroscopy-enhanced instrumented indentation technique. Quantitative analyses of the generated in situ Raman maps provide unique, new insight into the phase behavior of as-implanted a-Si. In particular, the occurrence and evolving spatial distribution of changes in the a-Si structure caused by processes, such as polyamorphization and crystallization, induced by indentation loading were measured. The experimental results are linked with previously published work on the plastic deformation of a-Si under hydrostatic compression and shear deformation to establish a sequence for the development of deformation of a-Si under indentation loading. The sequence involves three distinct deformation mechanisms of a-Si: (1) reversible deformation, (2) increase in coordination defects (onset of plastic deformation), and (3) phase transformation. Estimated conditions for the occurrence of these mechanisms are given with respect to relevant intrinsic and extrinsic parameters, such as indentation stress, volumetric strain, and bond angle distribution (a measure for the structural order of the amorphous network). The induced volumetric strains are accommodated solely by reversible deformation of the tetrahedral network when exposed to small indentation stresses. At greater indentation stresses, the increased volumetric strains in the tetrahedral network lead to the formation of predominately five-fold coordination defects, which seems to mark the onset of irreversible or plastic deformation of the a-Si thin film. Further increase in the indentation stress appears to initiate the formation of six-fold coordinated atomic arrangements. These six-fold coordinated arrangements may maintain their amorphous tetrahedral structure with a high density of coordination defects or nucleate as a new crystalline ?-tin phase within the a-Si network. | |
dc.description.sponsorship | B.H. gratefully acknowledges current funding from an Alvin M. Weinberg Fellowship (ORNL) and the Spallation Neutron Source (ORNL), sponsored by the U.S. Department of Energy, Office of Basic Energy Sciences. ORNL is funded under DOE-BES Contract No. DE-AC05-00OR22725, the SNS is supported by the Scientific User Facilities division, DOE-BES under Contract No. DE-AC05-00OR22725 and the Alvin M. Weinberg Fellowship by the ORNL LDRD scheme under Project No. 7620. | |
dc.format.mimetype | application/pdf | |
dc.publisher | American Physical Society | |
dc.rights | �2015 American Physical Society. | |
dc.source | Physical review. B, Condensed matter and materials physics | |
dc.title | In situ spectroscopic study of the plastic deformation of amorphous silicon under non-hydrostatic conditions induced by indentation | |
dc.type | Journal article | |
local.identifier.citationvolume | 92 | |
dc.date.issued | 2015-12 | |
local.publisher.url | https://www.aps.org/ | |
local.type.status | Published Version | |
local.type.status | Published Version | |
local.contributor.affiliation | Bradby, J. E., Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University | |
local.bibliographicCitation.issue | 21 | |
local.identifier.doi | 10.1103/PhysRevB.92.214110 | |
dcterms.accessRights | Open Access | |
dc.provenance | http://www.sherpa.ac.uk/romeo/issn/1098-0121/..."author can archive publisher's version/PDF" from SHERPA/RoMEO site (as at 04/01/19). | |
Collections | ANU Research Publications |
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