In situ spectroscopic study of the plastic deformation of amorphous silicon under non-hydrostatic conditions induced by indentation
Indentation-induced plastic deformation of amorphous silicon (a-Si) thin films was studied by in situ Raman imaging of the deformed contact region of an indented sample, employing a Raman spectroscopy-enhanced instrumented indentation technique. Quantitative analyses of the generated in situ Raman maps provide unique, new insight into the phase behavior of as-implanted a-Si. In particular, the occurrence and evolving spatial distribution of changes in the a-Si structure caused by processes,...[Show more]
|Collections||ANU Research Publications|
|Source:||Physical review. B, Condensed matter and materials physics|
|Access Rights:||Open Access|
|PhysRevB.92.214110.pdf||769.14 kB||Adobe PDF|
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