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Effect of deposition conditions and thermal annealing on the charge trapping properties of SiN[sub x] films

Ren, Yongling; Weber, Klaus J.; Nursam, Natalita M.; Wang, Da

Description

The density of charge trapping centers in SiNx:H films deposited by plasma enhanced chemical vapor deposition is investigated as a function of film stoichiometry and postdeposition annealing treatments. In the as-deposited films, the defect density is observed to increase with an increasing N/Si ratio x in the range of 0.89–1.45, and to correlate with the N–H bond density. Following the annealing in the temperature range of 500– 800 °C, the defect density increases for all N/Si...[Show more]

CollectionsANU Research Publications
Date published: 2010
Type: Journal article
URI: http://hdl.handle.net/1885/15505
Source: Applied Physics Letters
DOI: 10.1063/1.3518488

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