Ren, Yongling; Weber, Klaus J.; Nursam, Natalita M.; Wang, Da
The density of charge trapping centers in SiNx:H films deposited by plasma enhanced chemical
vapor deposition is investigated as a function of film stoichiometry and postdeposition annealing
treatments. In the as-deposited films, the defect density is observed to increase with an increasing
N/Si ratio x in the range of 0.89–1.45, and to correlate with the N–H bond density. Following the
annealing in the temperature range of 500– 800 °C, the defect density increases for all N/Si...[Show more]
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