Effect of deposition conditions and thermal annealing on the charge trapping properties of SiN[sub x] films
The density of charge trapping centers in SiNx:H films deposited by plasma enhanced chemical vapor deposition is investigated as a function of film stoichiometry and postdeposition annealing treatments. In the as-deposited films, the defect density is observed to increase with an increasing N/Si ratio x in the range of 0.89–1.45, and to correlate with the N–H bond density. Following the annealing in the temperature range of 500– 800 °C, the defect density increases for all N/Si...[Show more]
|Collections||ANU Research Publications|
|Source:||Applied Physics Letters|
|01_Ren_Effect_of_deposition_2010.pdf||Published Version||269.94 kB||Adobe PDF|
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