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Sharp edged silicon structures generated using atom lithography with metastable helium atoms

Lu, Weijian; Baldwin, Kenneth; Hoogerland, Maarten D.; Buckman, Stephen J.; Senden, T. J; Sheridan, T. E; Boswell, R. W

Description

By combining atom lithography and plasma etching technology in a two-step process, we demonstrate the transfer of sharp edged structures into silicon with a depth of 580 nm and an inclination of better than 86°. A self-assembled monolayer resist deposited on a Au-coated Si surface is damaged by a beam of metastable helium atoms through a physical mask. A wet etching process removes Au in the damaged regions, resulting in an intermediate mask of patterned Au on Si. Low-pressure plasma etching is...[Show more]

CollectionsANU Research Publications
Date published: 1998
Type: Journal article
URI: http://hdl.handle.net/1885/154645
Source: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
DOI: 10.1116/1.590421

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