Sharp edged silicon structures generated using atom lithography with metastable helium atoms
By combining atom lithography and plasma etching technology in a two-step process, we demonstrate the transfer of sharp edged structures into silicon with a depth of 580 nm and an inclination of better than 86°. A self-assembled monolayer resist deposited on a Au-coated Si surface is damaged by a beam of metastable helium atoms through a physical mask. A wet etching process removes Au in the damaged regions, resulting in an intermediate mask of patterned Au on Si. Low-pressure plasma etching is...[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures|
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