Hydrogen passivation of Interstitial Iron in Silicon by Annealing with PECVD Silicon Nitride Films
This paper reports on the effective passivation of interstitial iron in p-type boron-doped silicon via annealing with plasma-enhanced chemical vapour deposited (PECVD) silicon nitride films. The concentration of interstitial iron was shown to reduce by more than 90% after a 30-minute anneal at 600 – 900oC with the silicon nitride films present. The most effective hydrogenation of iron was found to take place at 700oC, where more than 99% of iron was passivated after 30 minutes. Results show...[Show more]
|Collections||ANU Research Publications|
|Source:||Proceedings of the European Photovoltaic Solar Energy Conference and Exhibition|
|Access Rights:||Open Access|
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.