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Hydrogen passivation of Interstitial Iron in Silicon by Annealing with PECVD Silicon Nitride Films

Liu, An Yao; Sun, Chang; MacDonald, Daniel


This paper reports on the effective passivation of interstitial iron in p-type boron-doped silicon via annealing with plasma-enhanced chemical vapour deposited (PECVD) silicon nitride films. The concentration of interstitial iron was shown to reduce by more than 90% after a 30-minute anneal at 600 – 900oC with the silicon nitride films present. The most effective hydrogenation of iron was found to take place at 700oC, where more than 99% of iron was passivated after 30 minutes. Results show...[Show more]

CollectionsANU Research Publications
Date published: 2015
Type: Conference paper
Source: Proceedings of the European Photovoltaic Solar Energy Conference and Exhibition
DOI: 10.4229/EUPVSEC20152015-2AV.1.40
Access Rights: Open Access


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