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Comparison of Recombination Activity of Grain Boundaries in Various Multicrystalline Silicon Materials

Sio, Hang Cheong (Kelvin); Phang, Sieu Pheng; Nguyen, Hieu; Yan, Di; Trupke, Thorsten; MacDonald, Daniel


We compare the recombination properties of grain boundaries in conventionally-solidified p-type, ntype and ‘high performance’ p-type multicrystalline silicon wafers in terms of their surface recombination velocities, and evaluate their response to phosphorus gettering and hydrogenation. Overall, grain boundaries in the conventional p-type samples were found to be more recombination active than those in the high performance p-type and conventional n-type samples. As-grown grain boundaries in...[Show more]

CollectionsANU Research Publications
Date published: 2015
Type: Conference paper
Source: Proceedings of the European Photovoltaic Solar Energy Conference and Exhibition
DOI: 10.4229/EUPVSEC20152015-2BO.3.6
Access Rights: Open Access


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