Comparison of Recombination Activity of Grain Boundaries in Various Multicrystalline Silicon Materials
We compare the recombination properties of grain boundaries in conventionally-solidified p-type, ntype and ‘high performance’ p-type multicrystalline silicon wafers in terms of their surface recombination velocities, and evaluate their response to phosphorus gettering and hydrogenation. Overall, grain boundaries in the conventional p-type samples were found to be more recombination active than those in the high performance p-type and conventional n-type samples. As-grown grain boundaries in...[Show more]
|Collections||ANU Research Publications|
|Source:||Proceedings of the European Photovoltaic Solar Energy Conference and Exhibition|
|Access Rights:||Open Access|
|01_Sio_Comparison_of_Recombination_2015.pdf||619.63 kB||Adobe PDF|
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