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Dislocations in laser-doped silicon detected by micro-photoluminescence spectroscopy

Nguyen, Hieu T.; Han, Young; Ernst, Marco; Fell, Andreas; Franklin, Evan; Macdonald, Daniel


We report the detection of laser-induced damage in laser-doped layers at the surface of crystalline silicon wafers, via micron-scale photoluminescence spectroscopy. The properties of the sub-band-gap emission from the induced defects are found to match the emission characteristics of dislocations. Courtesy of the high spatial resolution of the micro-photoluminescence spectroscopy technique, micron-scale variations in the extent of damage at the edge of the laser-doped region can be detected,...[Show more]

CollectionsANU Research Publications
Date published: 2015-07-13
Type: Journal article
Source: Applied Physics Letters
DOI: 10.1063/1.4926360


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