Skip navigation
Skip navigation

Dislocations in laser-doped silicon detected by micro-photoluminescence spectroscopy

Download (1.07 MB)

link to publisher version

  • Altmetric Citations

Nguyen, Hieu T.; Han, Young; Ernst, Marco; Fell, Andreas; Franklin, Evan; Macdonald, Daniel

Description

We report the detection of laser-induced damage in laser-doped layers at the surface of crystalline silicon wafers, via micron-scale photoluminescence spectroscopy. The properties of the sub-band-gap emission from the induced defects are found to match the emission characteristics of dislocations. Courtesy of the high spatial resolution of the micro-photoluminescence spectroscopy technique, micron-scale variations in the extent of damage at the edge of the laser-doped region can be detected,...[Show more]

dc.contributor.authorNguyen, Hieu T.
dc.contributor.authorHan, Young
dc.contributor.authorErnst, Marco
dc.contributor.authorFell, Andreas
dc.contributor.authorFranklin, Evan
dc.contributor.authorMacdonald, Daniel
dc.date.accessioned2015-09-14T01:50:49Z
dc.date.available2015-09-14T01:50:49Z
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/1885/15371
dc.description.abstractWe report the detection of laser-induced damage in laser-doped layers at the surface of crystalline silicon wafers, via micron-scale photoluminescence spectroscopy. The properties of the sub-band-gap emission from the induced defects are found to match the emission characteristics of dislocations. Courtesy of the high spatial resolution of the micro-photoluminescence spectroscopy technique, micron-scale variations in the extent of damage at the edge of the laser-doped region can be detected, providing a powerful tool to study and optimize laser-doping processes for silicon photovoltaics.
dc.description.sponsorshipThis work has been supported by the Australian Research Council (ARC) and the Australian Renewable Energy Agency (ARENA) through Research Grant No. RND009.
dc.format6 pages
dc.publisherAmerican Institute of Physics
dc.rights© 2015 AIP Publishing LLC. http://www.sherpa.ac.uk/romeo/issn/0003-6951/..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 14/09/15).
dc.sourceApplied Physics Letters
dc.titleDislocations in laser-doped silicon detected by micro-photoluminescence spectroscopy
dc.typeJournal article
local.identifier.citationvolume107
dcterms.dateAccepted2015-06-08
dc.date.issued2015-07-13
local.identifier.ariespublicationU1021258xPUB11
local.publisher.urlhttps://www.aip.org/
local.type.statusPublished Version
local.contributor.affiliationNguyen, H. T., Research School of Engineering, The Australian National University
local.contributor.affiliationHan, Y., Research School of Engineering, The Australian National University
local.contributor.affiliationErnst, M., Research School of Engineering, The Australian National University
local.contributor.affiliationFell, A., Research School of Engineering, The Australian National University
local.contributor.affiliationFranklin, E., Research School of Engineering, The Australian National University
local.contributor.affiliationMacdonald, D., Research School of Engineering, The Australian National University
local.bibliographicCitation.issue2
local.bibliographicCitation.startpage022101
local.identifier.doi10.1063/1.4926360
CollectionsANU Research Publications

Download

File Description SizeFormat Image
Nguyen et al Dislocations in Laser-doped Silicon Detected 2015.pdf1.07 MBAdobe PDFThumbnail
Show simple item record


Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  17 November 2022/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator