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Temperature dependence of the radiative recombination coefficient in crystalline silicon from spectral photoluminescence

Nguyen, Hieu T; Baker-Finch, Simeon; Macdonald, Daniel

Description

The radiative recombination coefficient B(T) in crystalline silicon is determined for the temperature range 90–363 K, and in particular from 270 to 350 K with an interval of 10 K, where only sparse data are available at present. The band-band absorption coefficient established recently by Nguyen et al. [J. Appl. Phys. 115, 043710 (2014)] via photoluminescence spectrum measurements is employed to compute the values of B(T) at various temperatures. The results agree very well with literature data...[Show more]

CollectionsANU Research Publications
Date published: 2014-03-19
Type: Journal article
URI: http://hdl.handle.net/1885/15370
Source: Applied Physics Letters
DOI: 10.1063/1.4869295

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