Temperature dependence of the radiative recombination coefficient in crystalline silicon from spectral photoluminescence
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Nguyen, Hieu T; Baker-Finch, Simeon; Macdonald, Daniel
Description
The radiative recombination coefficient B(T) in crystalline silicon is determined for the temperature range 90–363 K, and in particular from 270 to 350 K with an interval of 10 K, where only sparse data are available at present. The band-band absorption coefficient established recently by Nguyen et al. [J. Appl. Phys. 115, 043710 (2014)] via photoluminescence spectrum measurements is employed to compute the values of B(T) at various temperatures. The results agree very well with literature data...[Show more]
Collections | ANU Research Publications |
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Date published: | 2014-03-19 |
Type: | Journal article |
URI: | http://hdl.handle.net/1885/15370 |
Source: | Applied Physics Letters |
DOI: | 10.1063/1.4869295 |
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Nguyen et al Temperature Dependence of the Radiative 2014.pdf | 637.43 kB | Adobe PDF |
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