Temperature dependence of the radiative recombination coefficient in crystalline silicon from spectral photoluminescence
The radiative recombination coefficient B(T) in crystalline silicon is determined for the temperature range 90–363 K, and in particular from 270 to 350 K with an interval of 10 K, where only sparse data are available at present. The band-band absorption coefficient established recently by Nguyen et al. [J. Appl. Phys. 115, 043710 (2014)] via photoluminescence spectrum measurements is employed to compute the values of B(T) at various temperatures. The results agree very well with literature data...[Show more]
|Collections||ANU Research Publications|
|Source:||Applied Physics Letters|
|Nguyen et al Temperature Dependence of the Radiative 2014.pdf||637.43 kB||Adobe PDF|
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