Temperature dependence of the band-band absorption coefficient in crystalline silicon from photoluminescence
The band-band absorption coefficient in crystalline silicon has been determined using spectral photoluminescence measurements across the wavelength range of 990–1300 nm, and a parameterization of the temperature dependence has been established to allow interpolation of accurate values of the absorption coefficient for any temperature between 170 and 363 K. Band-band absorption coefficient measurements across a temperature range of 78–363 K are found to match well with previous results from...[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Applied Physics|
|Nguyen et al Temperature Dependence of the Band-band Absorption 2014.pdf||2.23 MB||Adobe PDF|
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