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Greater than 50% inversion in Erbium doped chalcogenide waveguides

Yan, Kunlun; Vu, Khu; Wang, Rongping; Madden, Steve


We report Er-doped Ge-Ga-Se films and waveguides deposited using co-thermal evaporation and patterned with plasma etching. Strong photoluminescence at 1.54 µm with intrinsic lifetime of 1 ms was obtained from deposited films with 1490 nm excitation. Erbium population inversion up to 50% was achieved, with a maximum of ~55% possible at saturation for the first time to the author’s knowledge, approaching the theoretical maximum of 65%. Whilst gain was not achieved due to the presence of...[Show more]

CollectionsANU Research Publications
Date published: 2016
Type: Journal article
Source: Optics Express
DOI: 10.1364/OE.24.023304
Access Rights: Open Access


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