Greater than 50% inversion in Erbium doped chalcogenide waveguides
We report Er-doped Ge-Ga-Se films and waveguides deposited using co-thermal evaporation and patterned with plasma etching. Strong photoluminescence at 1.54 µm with intrinsic lifetime of 1 ms was obtained from deposited films with 1490 nm excitation. Erbium population inversion up to 50% was achieved, with a maximum of ~55% possible at saturation for the first time to the author’s knowledge, approaching the theoretical maximum of 65%. Whilst gain was not achieved due to the presence of...[Show more]
|Collections||ANU Research Publications|
|Access Rights:||Open Access|
|01_Yan_Greater_than_50%25_inversion_in_2016.pdf||2.44 MB||Adobe PDF|
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.