Graded silicon nitride films: Optics and passivation
The authors describe a method for graded thin-film deposition requiring a single step that exploits the noninstantaneous replacement of reactant gases. They deposit the graded silicon-nitride films by plasma enhanced chemical vapor deposition. Channeling Rutherford backscattering measurements of the graded films find the N:Si ratio increases sixfold from the c-Si surface to air interfaces. The refractive index at the crystalline silicon/film interface was 2.96 reducing monotonically to 1.95 at...[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Vacuum Science and Technology A|
|Access Rights:||Open Access|
|01_Thomson_Graded_silicon_nitride_films%3A_2015.pdf||694.34 kB||Adobe PDF|
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.