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Plasma enhanced atomic layer deposition of gallium oxide on crystalline silicon: demonstration of surface passivation and negative interfacial charge

Allen, Thomas G.; Cuevas, Andres

Description

Herein we report on the passivation of crystalline silicon by gallium oxide (Ga2O3) using oxygen plasma as the oxidizing reactant in an atomic layer deposition (ALD) process. Excess carrier lifetimes of 2.1 ms have been measured on 1.75 Ω cm p-type silicon, from which a surface recombination current density J0 of 7 fA cm¯² is extracted. From high frequency capacitance-voltage (HF CV) measurements it is shown that, as in the case of Al2O3, the presence of a high negative charge density Qtot/q of...[Show more]

dc.contributor.authorAllen, Thomas G.
dc.contributor.authorCuevas, Andres
dc.date.accessioned2015-09-08T02:42:34Z
dc.date.available2015-09-08T02:42:34Z
dc.identifier.issn1862-6254
dc.identifier.urihttp://hdl.handle.net/1885/15255
dc.description.abstractHerein we report on the passivation of crystalline silicon by gallium oxide (Ga2O3) using oxygen plasma as the oxidizing reactant in an atomic layer deposition (ALD) process. Excess carrier lifetimes of 2.1 ms have been measured on 1.75 Ω cm p-type silicon, from which a surface recombination current density J0 of 7 fA cm¯² is extracted. From high frequency capacitance-voltage (HF CV) measurements it is shown that, as in the case of Al2O3, the presence of a high negative charge density Qtot/q of up to -6.2 × 10¹² cm¯² is one factor contributing to the passivation of silicon by Ga2O3. Defect densities at midgap on the order of ∼5 × 1011 eV-1 cm-2 are extracted from the HF CV data on samples annealed at 300 °C for 30 minutes in a H2/Ar ambient, representing an order of magnitude reduction in the defect density compared to pre-anneal data. Passivation of a boron-diffused p+ surface (96 Ω/□) is also demonstrated, resulting in a J0 of 52 fA cm-2.
dc.description.sponsorshipThis work has been supported by the Australian government through the Austra-lian Renewable Energy Agency (ARENA).
dc.publisherWiley
dc.rights© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinhei
dc.sourcephysica status solidi (RRL) - Rapid Research Letters
dc.titlePlasma enhanced atomic layer deposition of gallium oxide on crystalline silicon: demonstration of surface passivation and negative interfacial charge
dc.typeJournal article
local.identifier.citationvolume9
dc.date.issued2015-04
local.identifier.ariespublicationa383154xPUB1468
local.publisher.urlhttp://www.interscience.wiley.com/
local.type.statusPublished Version
local.contributor.affiliationAllen, T. G., Research School of Engineering, The Australian National University
local.contributor.affiliationCuevas, A., Research School of Engineering, The Australian National University
local.description.embargo2037-12-31
local.bibliographicCitation.issue4
local.bibliographicCitation.startpage220
local.bibliographicCitation.lastpage224
local.identifier.doi10.1002/pssr.201510056
CollectionsANU Research Publications

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