Plasma enhanced atomic layer deposition of gallium oxide on crystalline silicon: demonstration of surface passivation and negative interfacial charge
Herein we report on the passivation of crystalline silicon by gallium oxide (Ga2O3) using oxygen plasma as the oxidizing reactant in an atomic layer deposition (ALD) process. Excess carrier lifetimes of 2.1 ms have been measured on 1.75 Ω cm p-type silicon, from which a surface recombination current density J0 of 7 fA cm¯² is extracted. From high frequency capacitance-voltage (HF CV) measurements it is shown that, as in the case of Al2O3, the presence of a high negative charge density Qtot/q of...[Show more]
|Collections||ANU Research Publications|
|Source:||physica status solidi (RRL) - Rapid Research Letters|
|01_Allen_Plasma_enhanced_atomic_layer_2015.pdf||495.94 kB||Adobe PDF||Request a copy|
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.