Synthesis of Ge1−xSnx alloys by ion implantation and pulsed laser melting: Towards a group IV direct bandgap material
The germanium-tin (Ge1−xSnx) material system is expected to be a direct bandgap group IV semiconductor at a Sn content of 6.5−11 at. %. Such Sn concentrations can be realized by non-equilibrium deposition techniques such as molecular beam epitaxy or chemical vapour deposition. In this report, the combination of ion implantation and pulsed laser melting is demonstrated to be an alternative promising method to produce a highly Sn concentrated alloy with a good crystal quality. The structural...[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Applied Physics|
|Access Rights:||Open Access|
|01_Tran_Synthesis_of_Ge1%E2%88%92xSnx_alloys_2016.pdf||1.69 MB||Adobe PDF|
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