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Synthesis of Ge1−xSnx alloys by ion implantation and pulsed laser melting: Towards a group IV direct bandgap material

Tran, T; Pastor, David; Gandhi, Hemi H.; Smillie, Lachlan; Akey, Austin J; Aziz, Michael; Williams, James

Description

The germanium-tin (Ge1−xSnx) material system is expected to be a direct bandgap group IV semiconductor at a Sn content of 6.5−11 at. %. Such Sn concentrations can be realized by non-equilibrium deposition techniques such as molecular beam epitaxy or chemical vapour deposition. In this report, the combination of ion implantation and pulsed laser melting is demonstrated to be an alternative promising method to produce a highly Sn concentrated alloy with a good crystal quality. The structural...[Show more]

CollectionsANU Research Publications
Date published: 2016
Type: Journal article
URI: http://hdl.handle.net/1885/152297
Source: Journal of Applied Physics
DOI: 10.1063/1.4948960
Access Rights: Open Access

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