The influence of capping layers on pore formation in Ge during ion implantation
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Alkhaldi, Huda; Tran, Tuan; Kremer, Felipe; Williams, James
Description
Ion induced porosity in Ge has been investigated with and without a cap layer for two ion species, Ge and Sn, with respect to ion fluence and temperature. Results without a cap are consistent with a previous work in terms of an observed ion fluence and temperature dependence of porosity, but with a clear ion species effect where heavier Sn ions induce porosity at lower temperature (and fluence) than Ge. The effect of a cap layer is to suppress porosity for both Sn and Ge at lower temperatures...[Show more]
Collections | ANU Research Publications |
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Date published: | 2016 |
Type: | Journal article |
URI: | http://hdl.handle.net/1885/152296 |
Source: | Journal of Applied Physics |
DOI: | 10.1063/1.4969051 |
Access Rights: | Open Access |
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File | Description | Size | Format | Image |
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01_Alkhaldi_The_influence_of_capping_2016.pdf | 6.56 MB | Adobe PDF |
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