The influence of capping layers on pore formation in Ge during ion implantation
Ion induced porosity in Ge has been investigated with and without a cap layer for two ion species, Ge and Sn, with respect to ion fluence and temperature. Results without a cap are consistent with a previous work in terms of an observed ion fluence and temperature dependence of porosity, but with a clear ion species effect where heavier Sn ions induce porosity at lower temperature (and fluence) than Ge. The effect of a cap layer is to suppress porosity for both Sn and Ge at lower temperatures...[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Applied Physics|
|01_Alkhaldi_The_influence_of_capping_2016.pdf||6.56 MB||Adobe PDF|
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