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The influence of capping layers on pore formation in Ge during ion implantation

Alkhaldi, Huda; Tran, Tuan; Kremer, Felipe; Williams, James

Description

Ion induced porosity in Ge has been investigated with and without a cap layer for two ion species, Ge and Sn, with respect to ion fluence and temperature. Results without a cap are consistent with a previous work in terms of an observed ion fluence and temperature dependence of porosity, but with a clear ion species effect where heavier Sn ions induce porosity at lower temperature (and fluence) than Ge. The effect of a cap layer is to suppress porosity for both Sn and Ge at lower temperatures...[Show more]

CollectionsANU Research Publications
Date published: 2016
Type: Journal article
URI: http://hdl.handle.net/1885/152296
Source: Journal of Applied Physics
DOI: 10.1063/1.4969051

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