Skip navigation
Skip navigation

The influence of capping layers on pore formation in Ge during ion implantation

Alkhaldi, Huda; Tran, Tuan; Kremer, Felipe; Williams, James


Ion induced porosity in Ge has been investigated with and without a cap layer for two ion species, Ge and Sn, with respect to ion fluence and temperature. Results without a cap are consistent with a previous work in terms of an observed ion fluence and temperature dependence of porosity, but with a clear ion species effect where heavier Sn ions induce porosity at lower temperature (and fluence) than Ge. The effect of a cap layer is to suppress porosity for both Sn and Ge at lower temperatures...[Show more]

CollectionsANU Research Publications
Date published: 2016
Type: Journal article
Source: Journal of Applied Physics
DOI: 10.1063/1.4969051


File Description SizeFormat Image
01_Alkhaldi_The_influence_of_capping_2016.pdf6.56 MBAdobe PDFThumbnail

Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  22 January 2019/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator