Electrical and structural properties of In-implanted Si1−xGex alloys
We report on the effects of dopant concentration and substrate stoichiometry on the electrical and structural properties of In-implanted Si1−xGex alloys. Correlating the fraction of electrically active In atoms from Hall Effect measurements with the In atomic environment determined by X-ray absorption spectroscopy, we observed the transition from electrically active, substitutional In at low In concentration to electrically inactive metallic In at high In concentration. The In solid-solubility...[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Applied Physics|
|Access Rights:||Open Access|
|01_Feng_Electrical_and_structural_2016.pdf||3.11 MB||Adobe PDF|
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