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Electrical and structural properties of In-implanted Si1−xGex alloys

Feng, Ruixing; Kremer, Felipe; Sprouster, D. J.; Mirzaei, Sahar; Decoster, Stefan; Glover, C J; Medling, Scott; Hansen, John L; Nylandsted-Larsen, A; Russo, Salvy P; Ridgway, Mark C


We report on the effects of dopant concentration and substrate stoichiometry on the electrical and structural properties of In-implanted Si1−xGex alloys. Correlating the fraction of electrically active In atoms from Hall Effect measurements with the In atomic environment determined by X-ray absorption spectroscopy, we observed the transition from electrically active, substitutional In at low In concentration to electrically inactive metallic In at high In concentration. The In solid-solubility...[Show more]

CollectionsANU Research Publications
Date published: 2016
Type: Journal article
Source: Journal of Applied Physics
DOI: 10.1063/1.4940046
Access Rights: Open Access


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