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Gettering of interstitial iron in silicon by plasma-enhanced chemical vapour deposited silicon nitride films

Liu, An Yao; Sun, Chang; Markevich, Vladimir P; Peaker, Anthony R; Murphy, John; MacDonald, Daniel

Description

It is known that the interstitial iron concentration in silicon is reduced after annealing silicon wafers coated with plasma-enhanced chemical vapour deposited (PECVD) silicon nitride films. The underlying mechanism for the significant iron reduction has remained unclear and is investigated in this work. Secondary ion mass spectrometry (SIMS) depth profiling of iron is performed on annealed iron-contaminated single-crystalline silicon wafers passivated with PECVD silicon nitride films. SIMS...[Show more]

dc.contributor.authorLiu, An Yao
dc.contributor.authorSun, Chang
dc.contributor.authorMarkevich, Vladimir P
dc.contributor.authorPeaker, Anthony R
dc.contributor.authorMurphy, John
dc.contributor.authorMacDonald, Daniel
dc.date.accessioned2018-11-29T22:52:49Z
dc.date.available2018-11-29T22:52:49Z
dc.identifier.issn0021-8979
dc.identifier.urihttp://hdl.handle.net/1885/152283
dc.description.abstractIt is known that the interstitial iron concentration in silicon is reduced after annealing silicon wafers coated with plasma-enhanced chemical vapour deposited (PECVD) silicon nitride films. The underlying mechanism for the significant iron reduction has remained unclear and is investigated in this work. Secondary ion mass spectrometry (SIMS) depth profiling of iron is performed on annealed iron-contaminated single-crystalline silicon wafers passivated with PECVD silicon nitride films. SIMS measurements reveal a high concentration of iron uniformly distributed in the annealed silicon nitride films. This accumulation of iron in the silicon nitride film matches the interstitial iron loss in the silicon bulk. This finding conclusively shows that the interstitial iron is gettered by the silicon nitride films during annealing over a wide temperature range from 250 °C to 900 °C, via a segregation gettering effect. Further experimental evidence is presented to support this finding. Deep-level transient spectroscopy analysis shows that no new electrically active defects are formed in the silicon bulk after annealing iron-containing silicon with silicon nitride films, confirming that the interstitial iron loss is not due to a change in the chemical structure of iron related defects in the silicon bulk. In addition, once the annealed silicon nitride films are removed, subsequent high temperature processes do not result in any reappearance of iron. Finally, the experimentally measured iron decay kinetics are shown to agree with a model of iron diffusion to the surface gettering sites, indicating a diffusion-limited iron gettering process for temperatures below 700 °C. The gettering process is found to become reaction-limited at higher temperatures.
dc.format.mimetypeapplication/pdf
dc.publisherAmerican Institute of Physics (AIP)
dc.sourceJournal of Applied Physics
dc.titleGettering of interstitial iron in silicon by plasma-enhanced chemical vapour deposited silicon nitride films
dc.typeJournal article
local.description.notesImported from ARIES
local.identifier.citationvolume120
dc.date.issued2016
local.identifier.absfor090607 - Power and Energy Systems Engineering (excl. Renewable Power)
local.identifier.ariespublicationa383154xPUB5104
local.type.statusPublished Version
local.contributor.affiliationLiu, An Yao, College of Engineering and Computer Science, ANU
local.contributor.affiliationSun, Chang, College of Engineering and Computer Science, ANU
local.contributor.affiliationMarkevich, Vladimir P, University of Manchester
local.contributor.affiliationPeaker, Anthony R, University of Manchester
local.contributor.affiliationMurphy, John, University of Warwick
local.contributor.affiliationMacDonald, Daniel, College of Engineering and Computer Science, ANU
local.bibliographicCitation.issue19
local.identifier.doi10.1063/1.4967914
dc.date.updated2018-11-29T07:48:37Z
local.identifier.scopusID2-s2.0-84998892661
local.identifier.thomsonID000388958200003
dcterms.accessRightsOpen Access
CollectionsANU Research Publications

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