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Gettering of interstitial iron in silicon by plasma-enhanced chemical vapour deposited silicon nitride films

Liu, An Yao; Sun, Chang; Markevich, Vladimir P; Peaker, Anthony R; Murphy, John; MacDonald, Daniel

Description

It is known that the interstitial iron concentration in silicon is reduced after annealing silicon wafers coated with plasma-enhanced chemical vapour deposited (PECVD) silicon nitride films. The underlying mechanism for the significant iron reduction has remained unclear and is investigated in this work. Secondary ion mass spectrometry (SIMS) depth profiling of iron is performed on annealed iron-contaminated single-crystalline silicon wafers passivated with PECVD silicon nitride films. SIMS...[Show more]

CollectionsANU Research Publications
Date published: 2016
Type: Journal article
URI: http://hdl.handle.net/1885/152283
Source: Journal of Applied Physics
DOI: 10.1063/1.4967914
Access Rights: Open Access

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