Suppression of ion-implantation induced porosity in germanium by a silicon dioxide capping layer
Ion implantation with high ion fluences is indispensable for successful use of germanium (Ge) in the next generation of electronic and photonic devices. However, Ge readily becomes porous after a moderate fluence implant (∼1×1015 ion cm−2) at room temperature, and for heavy ion species such as tin (Sn), holding the target at liquid nitrogen (LN2) temperature suppresses porosity formation only up to a fluence of 2×1016 ion cm−2. We show, using stylus profilometry and electron microscopy, that a...[Show more]
|Collections||ANU Research Publications|
|Source:||Applied Physics Letters|
|Access Rights:||Open Access|
|01_Tran_Suppression_of_2016.pdf||1.18 MB||Adobe PDF|
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