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Suppression of ion-implantation induced porosity in germanium by a silicon dioxide capping layer

Tran, T; Alkhaldi, Huda; Gandhi, Hemi; Pastor, David; Huston, Larissa; Wong-Leung, Yin-Yin (Jennifer); Aziz, Michael; Williams, James

Description

Ion implantation with high ion fluences is indispensable for successful use of germanium (Ge) in the next generation of electronic and photonic devices. However, Ge readily becomes porous after a moderate fluence implant (∼1×1015 ion cm−2) at room temperature, and for heavy ion species such as tin (Sn), holding the target at liquid nitrogen (LN2) temperature suppresses porosity formation only up to a fluence of 2×1016 ion cm−2. We show, using stylus profilometry and electron microscopy, that a...[Show more]

CollectionsANU Research Publications
Date published: 2016
Type: Journal article
URI: http://hdl.handle.net/1885/151997
Source: Applied Physics Letters
DOI: 10.1063/1.4961620
Access Rights: Open Access

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