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Suppression of ion-implantation induced porosity in germanium by a silicon dioxide capping layer

Tran, T; Alkhaldi, Huda; Gandhi, Hemi; Pastor, David; Huston, Larissa; Wong-Leung, Yin-Yin (Jennifer); Aziz, Michael; Williams, James


Ion implantation with high ion fluences is indispensable for successful use of germanium (Ge) in the next generation of electronic and photonic devices. However, Ge readily becomes porous after a moderate fluence implant (∼1×1015 ion cm−2) at room temperature, and for heavy ion species such as tin (Sn), holding the target at liquid nitrogen (LN2) temperature suppresses porosity formation only up to a fluence of 2×1016 ion cm−2. We show, using stylus profilometry and electron microscopy, that a...[Show more]

CollectionsANU Research Publications
Date published: 2016
Type: Journal article
Source: Applied Physics Letters
DOI: 10.1063/1.4961620
Access Rights: Open Access


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