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Resistive switching memories in MoS2 nanosphere assemblies

Xu, Xiao-Yong; Yin, Zongyou; Xu, Chun-Xiang; Dai, Jun; Hu, Jing-Guo

Description

A resistive switching memory device consisting of reduced graphene oxide and indium tin oxide as top/bottom two electrodes, separated by dielectric MoS2 nanosphere assemblies as the active interlayer, was fabricated. This device exhibits the rewritable nonvolatile resistive switching with low SET/RESET voltage (∼2 V), high ON/OFF resistance ratio (∼10 4), and superior electrical bistability, introducing a potential application in data storage field. The resistance switching mechanism was...[Show more]

CollectionsANU Research Publications
Date published: 2014
Type: Journal article
URI: http://hdl.handle.net/1885/151984
Source: Applied Physics Letters
DOI: 10.1063/1.4862755
Access Rights: Open Access

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