Skip navigation
Skip navigation

Resistive switching memories in MoS2 nanosphere assemblies

Xu, Xiao-Yong; Yin, Zongyou; Xu, Chun-Xiang; Dai, Jun; Hu, Jing-Guo


A resistive switching memory device consisting of reduced graphene oxide and indium tin oxide as top/bottom two electrodes, separated by dielectric MoS2 nanosphere assemblies as the active interlayer, was fabricated. This device exhibits the rewritable nonvolatile resistive switching with low SET/RESET voltage (∼2 V), high ON/OFF resistance ratio (∼10 4), and superior electrical bistability, introducing a potential application in data storage field. The resistance switching mechanism was...[Show more]

CollectionsANU Research Publications
Date published: 2014
Type: Journal article
Source: Applied Physics Letters
DOI: 10.1063/1.4862755
Access Rights: Open Access


There are no files associated with this item.

Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  19 May 2020/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator