Hydrogenation in doped poly-Si passivated contact solar cells
In c-Si solar cells, doped poly-Si/SiOx stacks both form carrier selective junctions and provide excellent surface passivation. They are key components of novel passivating-contact solar cell structures. The doped poly-Si films often contain a high density of defects which can potentially affect the quality of the passivating-contact structures and thus the overall performance of the solar cells. Hydrogenation techniques could be used to passivate defects within the doped poly-Si...[Show more]
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