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Dopant and defect density imaging in crystalline Silicon

Lim, Siew

Description

Accurate knowledge of dopant concentration of silicon wafers is of considerable interest for solar cell fabrication. Conventionally, dark conductance measurements, four-point probe analysis or eddy current mapping are used for the determination of dopant concentrations in silicon material. The main drawback of these methods lies in their limited spatial resolution, as well as the slow nature of their point-by-point mapping. The thesis is concerned with the development of a photoluminescence...[Show more]

CollectionsOpen Access Theses
Date published: 2014
Type: Thesis (PhD)
URI: http://hdl.handle.net/1885/151571
DOI: 10.25911/5d515443e6ab5
Access Rights: Open Access

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