Dopant and defect density imaging in crystalline Silicon
Accurate knowledge of dopant concentration of silicon wafers is of considerable interest for solar cell fabrication. Conventionally, dark conductance measurements, four-point probe analysis or eddy current mapping are used for the determination of dopant concentrations in silicon material. The main drawback of these methods lies in their limited spatial resolution, as well as the slow nature of their point-by-point mapping. The thesis is concerned with the development of a photoluminescence...[Show more]
|Collections||Open Access Theses|
|Access Rights:||Open Access|
|b35790350-Lim_S.pdf||246.51 MB||Adobe PDF|
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.