MOCVD growth and characterisation of au-catalysed InP nanowires
The tunable bandgap of InP nanowires compared to bulk InP offers a wide range of applications in optoelectronic and high-speed electronic devices including photodetectors, lasers, light-emitting diodes, transistors and solar cells. The aforementioned devices demand nanowires with good morphology, high-quality crystal structure and controllable optical properties. This can be realised by tailoring growth parameters to achieve nanowires of uniform diameter along their length and structurally...[Show more]
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