Swift heavy ion irradiation of amorphous ge, amorphous si and amorphous si1-xgex alloys
The interaction of swift heavy ions (SHIs) with solids is characterised by inelastic collisions between the ions and the target electrons. SHIs typically deposit tens of keV/nm of energy in the target material causing extreme excitation of the electronic subsystem that result in different damage formation mechanisms than for ion implantation such as the formation of ion tracks, plastic deformation or porous layer formation. The crystalline phases of the elemental semiconductors Ge and Si are...[Show more]
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