Epitaxial growth and characterisation of GaAs nanowires on Si for optoelectronic device applications
This thesis examines the Au-assisted growth of GaAs nanowires by MOCVD, and how this growth process can be tailored to produce well-aligned nanowires on Si suitable for applications in electronics and optoelectronics. i) Improving the morphology of GaAs nanowires on Si: Straight, vertically aligned GaAs nanowires were grown on Si (111) substrates coated with thin GaAs buffer layers. V/III precursor ratio and growth temperature are crucial factors influencing the morphology and quality of buffer...[Show more]
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