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Photoelectrochemical studies of InGaN/GaN MQW photoanodes

Butson, Joshua; Narangari, Parvathala Reddy; Karuturi, Siva Krishna; Yew, Rowena; Lysevych, Mykhaylo; Tan, Hark Hoe; Jagadish, Chennupati

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The research interest in photoelectrochemical (PEC) water splitting is ever growing due to its potential to contribute towards clean and portable energy. However, the lack of low energy band gap materials with high photocorrosion resistance is the primary setback inhibiting this technology from commercialisation. The ternary alloy InGaN shows promise to meet the photoelectrode material requirements due to its high chemical stability and band gap tunability. The band gap of InGaN can be...[Show more]

dc.contributor.authorButson, Joshua
dc.contributor.authorNarangari, Parvathala Reddy
dc.contributor.authorKaruturi, Siva Krishna
dc.contributor.authorYew, Rowena
dc.contributor.authorLysevych, Mykhaylo
dc.contributor.authorTan, Hark Hoe
dc.contributor.authorJagadish, Chennupati
dc.date.accessioned2018-11-08T04:25:23Z
dc.date.available2018-11-08T04:25:23Z
dc.identifier.issn0957-4484
dc.identifier.urihttp://hdl.handle.net/1885/149062
dc.description.abstractThe research interest in photoelectrochemical (PEC) water splitting is ever growing due to its potential to contribute towards clean and portable energy. However, the lack of low energy band gap materials with high photocorrosion resistance is the primary setback inhibiting this technology from commercialisation. The ternary alloy InGaN shows promise to meet the photoelectrode material requirements due to its high chemical stability and band gap tunability. The band gap of InGaN can be modulated from the UV to IR regions by adjusting the In concentration so as to absorb the maximum portion of the solar spectrum. This paper reports on the influence of In concentration on the PEC properties of planar and nanopillar (NP) InGaN/GaN multi-quantum well (MQW) photoanodes, where NPs were fabricated using a top-down approach. Results show that changing the In concentration, while having a minor effect on the PEC performance of planar MQWs, has an enormous impact on the PEC performance of NP MQWs, with large variations in the photocurrent density observed. Planar photoanodes containing MQWs generate marginally lower photocurrents compared to photoanodes without MQWs when illuminated with sunlight. NP MQWs with 30% In generated the highest photocurrent density of 1.6 mA cm-2, 4 times greater than that of its planar counterpart and 1.8 times greater than that of the NP photoanode with no MQWs. The InGaN/GaN MQWs also slightly influenced the onset potential of both the planar and NP photoanodes. Micro-photoluminescence, diffuse reflectance spectroscopy and IPCE measurements are used to explain these results.
dc.description.sponsorshipARC grant DP140103278 (2014-2016) - H.H. Tan, Nitride-based Compound Semiconductors for Solar Water Splitting
dc.format.mimetypeapplication/pdf
dc.format.mimetypeapplication/pdf
dc.language.isoen_AU
dc.sourceNanotechnology
dc.titlePhotoelectrochemical studies of InGaN/GaN MQW photoanodes
dc.typeJournal article
local.identifier.citationvolume29
dc.date.issued2018-01-26
local.type.statusAccepted Version
local.contributor.affiliationTan, H. H., Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University
dc.relationhttp://purl.org/au-research/grants/arc/DP140103278
local.identifier.essn1361-6528
local.bibliographicCitation.issue4
local.bibliographicCitation.startpage045403
local.identifier.doi10.1088/1361-6528/aa9eae
dcterms.accessRightsOpen Access
CollectionsANU Research Publications

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