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Amorphous group III–V semiconductors

Ridgway, Mark C.

Description

Structural disorder is common to the amorphous Group IV and III–V semiconductors as manifested by an increase in bondlength and Debye-Waller factor and a decrease in coordination number relative to the crystalline phase. A second component of disorder, unique to compound semiconductors, is chemical disorder in the form of homopolar bonding. In this chapter, the application of XAS to the characterisation of both structural and chemical disorder in the amorphous Group III–V semiconductors is...[Show more]

CollectionsANU Research Publications
Date published: 2014-11-06
Type: Book chapter
URI: http://hdl.handle.net/1885/14737
Source: Springer Series in Optical Sciences
DOI: 10.1007/978-3-662-44362-0_8

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