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Electronic passivation of silicon surfaces by thin films of atomic layer deposited gallium oxide

Allen, T. G.; Cuevas, A.

Description

This paper proposes the application of gallium oxide (Ga₂O₃) thin films to crystalline silicon solar cells. Effective passivation of n- and p-type crystalline silicon surfaces has been achieved by the application of very thin Ga₂O₃ films prepared by atomic layer deposition using trimethylgallium (TMGa) and ozone (O₃) as the reactants. Surface recombination velocities as low as 6.1 cm/s have been recorded with films less than 4.5 nm thick. A range of deposition parameters has been explored, with...[Show more]

dc.contributor.authorAllen, T. G.
dc.contributor.authorCuevas, A.
dc.date.accessioned2015-08-06T02:45:17Z
dc.date.available2015-08-06T02:45:17Z
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/1885/14617
dc.description.abstractThis paper proposes the application of gallium oxide (Ga₂O₃) thin films to crystalline silicon solar cells. Effective passivation of n- and p-type crystalline silicon surfaces has been achieved by the application of very thin Ga₂O₃ films prepared by atomic layer deposition using trimethylgallium (TMGa) and ozone (O₃) as the reactants. Surface recombination velocities as low as 6.1 cm/s have been recorded with films less than 4.5 nm thick. A range of deposition parameters has been explored, with growth rates of approximately 0.2 Å/cycle providing optimum passivation. The thermal activation energy for passivation of the Si-Ga₂O₃ interface has been found to be approximately 0.5 eV. Depassivation of the interface was observed for prolonged annealing at increased temperatures. The activation energy for depassivation was measured to be 1.9 eV.
dc.description.sponsorshipThis work has been supported by the Australian government through the Australian Renewable Energy Agency (ARENA).
dc.format5 pages
dc.publisherAmerican Institute of Physics
dc.rights© 2014 AIP Publishing LLC. http://www.sherpa.ac.uk/romeo/issn/0003-6951/..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 6/08/15)
dc.sourceApplied Physics Letters
dc.titleElectronic passivation of silicon surfaces by thin films of atomic layer deposited gallium oxide
dc.typeJournal article
local.identifier.citationvolume105
dc.date.issued2014
local.publisher.urlhttps://www.aip.org/
local.type.statusPublished Version
local.contributor.affiliationAllen, T. G., Research School of Engineering, The Australian National University
local.contributor.affiliationCuevas, A., Research School of Engineering, The Australian National University
local.bibliographicCitation.issue3
local.bibliographicCitation.startpage031601
local.identifier.doi10.1063/1.4890737
CollectionsANU Research Publications

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