Electronic passivation of silicon surfaces by thin films of atomic layer deposited gallium oxide
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Description
This paper proposes the application of gallium oxide (Ga₂O₃) thin films to crystalline silicon solar cells. Effective passivation of n- and p-type crystalline silicon surfaces has been achieved by the application of very thin Ga₂O₃ films prepared by atomic layer deposition using trimethylgallium (TMGa) and ozone (O₃) as the reactants. Surface recombination velocities as low as 6.1 cm/s have been recorded with films less than 4.5 nm thick. A range of deposition parameters has been explored, with...[Show more]
Collections | ANU Research Publications |
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Date published: | 2014 |
Type: | Journal article |
URI: | http://hdl.handle.net/1885/14617 |
Source: | Applied Physics Letters |
DOI: | 10.1063/1.4890737 |
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Allen and Cuevas Electronic Passivation 2014.pdf | 838.61 kB | Adobe PDF | ![]() |
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